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随着硅材料加工技术的发展,拉制大面积单晶Si的工艺日趋成熟。借助激光的沉积技术由于在微电子线路器件的制造和修复方面具有良好的应用前景而吸引了一批研究者。本项目利用调QNd:YAG脉冲倍频激光,在p型Si上沉积Ni-Pd纳米膜(含少量P),研究各种工艺参数对镀层的影响,通过扫描隧道显微镜(STM)对沉积机理进行了初步探讨,并研究膜的析氢催化活性。
With the development of silicon material processing technology, the process of drawing large-area single-crystal Si is maturing. With laser deposition technology due to the manufacture and repair of microelectronic circuit devices have good prospects and attracted a group of researchers. The project uses QNd: YAG pulsed frequency doubling laser to deposit Ni-Pd nanofilm with a small amount of P on p-type Si to study the influence of various process parameters on the coating. The deposition mechanism is carried out by scanning tunneling microscope (STM) A preliminary study, and study of the hydrogen evolution of the membrane catalytic activity.