A novel SiC Schottky barrier source/drain NMOSFET(SiC SBSD-NMOSFET) with field-induced source/drain(FISD) extension is proposed and demonstrated by numerical simulation for the first time. In the new device the FISD extension is induced by a metal field-plate lying on top of the passivation oxide, and the width of Schottky barrier is controllde by the metal field-plate. The new structure not only eliminates the effect of the significantly improves the on-state current. Moreover, the performance of the present device exhibits very weak dependence on the widths of sidewalls.