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基于经典热力学理论,对a-SiNx/a-Si:H/a-SiNx三明治结构或a-Si:H/a-SiNx多层膜结构中纳米硅成核,以及从球形到鼓形的生长过程进行了研究.建立了限制性晶化理论模型:在纳米硅生长过程中,由于界面能增大将导致生长停止,给出限制性晶化条件——a-Si:H子层厚度小于34nm.在激光晶化和常规热退火两种方法形成的a-SiNx/nc-Si/a-SiNx三明治结构和nc-Si/a-SiNx多层膜结构中验证了该理论模型.
Based on the classical thermodynamic theory, the nucleation of nano-silicon in the a-SiNx / a-Si: H / a-SiNx sandwich structure or a-Si: H / a-SiNx multilayers and the growth from spherical to A theoretical model of limiting crystallization has been established: during the growth of nanosilver, the growth of nanocrystalline silicon will be stopped due to the increase of the interfacial energy. The thickness of the sub-layer of a-Si: H is less than 34 nm The theoretical model was validated in the a-SiNx / nc-Si / a-SiNx sandwich structure and the nc-Si / a-SiNx multilayers formed by laser crystallization and conventional thermal annealing.