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本文发展了一种简明的氢化非晶硅（a－Si：H）局域态电荷密度统一模型。从a－Si材料的带隙态密度适配参数分布函数出发，采用Shockley－Read－Hall统计描述，推导出了局域态电荷密度统一的解析表达式，该模型同时考虑了带尾局域态和缺陷局域态的作用。最后将该解析模型与现有的发表结果进行了比较，并由此分析了非晶硅场效应晶体管的迁移率。这种模型是研究非晶硅中的电荷俘获过程及非晶硅器件（如a－Si：HTFT）特性的必要基础。
In this paper, we develop a concise uniform model of hydrogenated amorphous silicon (a-Si: H) local charge density. Based on the Shockley-Read-Hall statistical description of the band gap density distribution parameters of a-Si materials, a unified analytic expression of the local charge density is deduced. The model also considers the band tail state And defect local state function. Finally, the analytical model is compared with the published results, and the mobility of the amorphous silicon field-effect transistor is analyzed. This model is the necessary basis for studying the charge trapping process in amorphous silicon and the characteristics of amorphous silicon devices such as a-Si: HTFT.