论文部分内容阅读
引言1963年 D.M.Mattox 首先提出的离子镀,1967年在美国获得了专利权,到了七十年代就迅速发展成为一种镀膜新技术并受到各国的重视。离子镀是在真空蒸发与真空溅射的基础上发展起来的一种新颖工艺,它是电真空科学与低温等离子体技术应用的新成就。由于离子镀膜具有附着力牢、绕射能力强,针孔少、沉积速率快、无公害、基片处理简单、膜密实均匀、基片和蒸发物质的组合范围广等优点,因此它被广泛地应用于尖端技术、机械工业、轻工业、电子工业、光学工业、原子能工业、航宇工业、航天工业等领域内。目前,借助这一技术,日本集成电路已经开始向薄膜化的方向发展,我国也正在大力发展这一技术。
Introduction Ion plating first proposed by D. M. Mattox in 1963 was patented in the United States in 1967, and rapidly developed into a new coating technology by the seventies and was valued by all countries. Ion plating is a novel process developed on the basis of vacuum evaporation and vacuum sputtering. It is a new achievement in the application of electric vacuum science and low temperature plasma technology. Ion plating is widely applied because of its strong adhesion, strong diffraction ability, few pinholes, fast deposition rate, pollution-free, simple substrate processing, uniform and dense film, and a wide range of combinations of substrate and evaporated materials. Used in cutting-edge technology, machinery industry, light industry, electronics industry, optical industry, atomic energy industry, aerospace industry, aerospace industry and other fields. At present, with this technology, Japan’s integrated circuits have begun to develop in the direction of thinning, our country is also vigorously developing this technology.