【摘 要】
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Scaling of silicon field-effect transistors has fueled the exponential development of microelectronics in the past 60 years,but is now close to its physical limits with the critical dimensions of state-of-the-art silicon devices approaching the sub-10 nm
【机 构】
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Department of Materials Science and Engineering,Department of Electrical and Computer Engineering,De
论文部分内容阅读
Scaling of silicon field-effect transistors has fueled the exponential development of microelectronics in the past 60 years,but is now close to its physical limits with the critical dimensions of state-of-the-art silicon devices approaching the sub-10 nm regime.Carbon nanotubes have been suggested to hold great promise of replacing the central role of silicon in the next-generation logic switches with their unique geometrical and electrical properties.In this article,I firstly examine the scaling advantages of carbon nanotubes compared to silicon from technology-development perspective,and then review the latest progress on addressing the manufacturability issues for scaled carbon-nanotube transistors,from materials to device-integration levels.Finally,the possible pathways for nanotube transistors to transition into commercial applications are discussed.
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