论文部分内容阅读
从阴、阳离子在界面上互相配位的角度介绍一种新的生长机理模型——配位多面体生长机理模型.指出了生长基元进入晶格的驱动力为离子之间的静电引力,其相对大小由界面上的离子络合母相中一个离子后的静电键强近似测定.讨论了NaCl,ZnS,CaF2和CsI晶体的生长习性,提出了一种新的生长习性规则.即当晶体的生长速度由台阶产生速度决定时,晶体的生长习性与晶体结构中配位能力最小的离子在界面上的配位数有关,离子在界面上的配位数越小,该晶面的生长速度越快.当晶体生长依靠台阶移动速度时,晶体的生长习性与晶体结构中配位能力最小的离子在界面上的密度有关,在界面上离子的密度越小,该晶面的生长速度越快.
A new model of growth mechanism, the mechanism of coordination polyhedron growth, is introduced from the viewpoint of coordination between anion and cation at the interface. It is pointed out that the driving force of growth element into the lattice is the electrostatic attraction between ions. The size is approximated by the strong electrostatic bond of one ion in the parent phase of the ion-complexed interface. The growth habit of NaCl, ZnS, CaF2 and CsI crystals is discussed and a new rule of growth habit is proposed. When the velocity is determined by the velocity of the step, the growth habit of the crystal is related to the coordination number of the ion having the smallest coordination ability in the crystal structure at the interface. The smaller the coordination number of the ion at the interface, the faster the growth rate of the crystal plane When crystal growth depends on the step moving speed, the growth habit of the crystal is related to the density of the ions with the smallest coordination ability in the crystal structure at the interface, and the smaller the density of the ion at the interface, the faster the growth rate of the crystal face.