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本文报道了用半导体激光进行血管内照射（ＩＬＩＢ）对十三例患者外周血淋巴细胞凋亡的影响。发现照射前ＰＣＤ为５．４７±３．６５％，第一次照射后为７．１±３．１６％，第五次照射后为１６．７１±９．５％。二者均有非常显著性差异（ｐ＜０．０１）。
This article reports the effects of intravascular irradiation (ILIB) with semiconductor lasers on the apoptosis of peripheral blood lymphocytes in thirteen patients. The PCD before irradiation was 5.47 ± 3.65%, 7.1 ± 3.16% after the first irradiation, and 16.71 ± 9.5% after the fifth irradiation. There was a very significant difference between the two (p <0.01).