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本文叙述了应用等离子体增强化学气相淀积(PECVD)技术,对InSb光伏器件的表面进行钝化。实验中采用正交实验的方法,选择了射频功率、反应气体的流量比、衬底温度等三种工艺因素,及其三个位级的变化所引起的对锑化铟器件上淀积的二氧化硅钝化膜的物理、化
This paper describes the use of plasma enhanced chemical vapor deposition (PECVD) technology to passivate the surface of InSb photovoltaic devices. In the experiment, orthogonal experiment was used to select three kinds of technological factors, such as RF power, flow ratio of reactant gas and substrate temperature, as well as the change of three-position level on the deposition of indium antimonide Silicon oxide passivation film physical, chemical