InGaAsP/GaAs激光器能抑制暗线缺陷的形成 ,器件的突然失效及缓慢退化有所减少。研究表明 ,高功率无铝半导体激光器比有铝的AlGaAs/GaAs激光器具有更高的可靠性。文章分析比较了高功率有铝和无铝半导体激光器的优缺点 ,介绍了波长为 80 8nm的高功率无铝半导体激光器的发展及国内外目前的研究状况。 InGaAsP / GaAs lasers can inhibit the formation of dark line defects, device failure and slow degradation of a decrease. Research shows that high-power aluminum-free semiconductor lasers have higher reliability than Al-based AlGaAs / GaAs lasers. The advantages and disadvantages of high power aluminum and aluminum-free semiconductor lasers are analyzed and compared. The development of high power aluminum-free semiconductor lasers with wavelength of 80 8nm and the current research situation at home and abroad are introduced.