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应用高掺杂pn结和异质结能带理论,计算了AlInAs/InP异质隧道结的电学特性,发现其性能优于AlInAs和InP同质隧道结,并得出了掺杂浓度与隧道电流的关系曲线。采用气态源分子束外延(GSMBE)设备生长了面电阻率约为10-4Ω.cm2的AlInAs/InP异质隧道结结构,并应用于制作1.3μm垂直腔面发射激光器(VCSEL),器件在室温下脉冲激射。
The electrical properties of the AlInAs / InP heterojunction tunnel junction are calculated using the theory of highly doped pn junctions and heterostructure energy bands. It is found that the performance of the AlInAs / InP heterojunction tunnel junction is superior to that of the AlInAs and InP homojunction tunnel junctions, and the doping concentration and tunneling current The relationship curve. The AlInAs / InP heterojunction tunnel junction structure with surface resistivity of about 10-4Ω.cm2 was grown by gas source molecular beam epitaxy (GSMBE) and used to fabricate a 1.3μm vertical cavity surface emitting laser (VCSEL). The device was grown at room temperature Pulsed under the pulse.