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对电子芯片在FC-72工质中浸没喷射沸腾换热进行了实验研究。通过干腐蚀技术在硅片表面加工出交错排列的柱状微结构(30μm×60νm,50μm×60μm,50μm×120μm,30νm×120μ1,宽×高),硅片尺寸为10 mm×10mm×0.5 mm,过冷度为35 K,喷射速度V分别为0.5,1,1.5 m/s。喷嘴数目分别为1,4和9,直径分别为3,1.5和1mm。喷嘴出口到芯片表面的距离分别为3,6和9 mm。实验表明,交错排列柱状微结构的换热效果要好于光滑芯片,临界热流密度随着喷射速度的增加而增加。在雷诺数及其他工况相同的情况下,不同喷嘴数目对换热的影响不同,当n=4时,所有芯片的壁面温度最低,临界热流密度最高,其次是n=9,换热效果最差的是n=1。在雷诺数及其他工况相同的情况下,所有芯片的换热性能在喷射距离s=3 mm时最好,其壁温最低,临界热流密度最高,随着喷射距离的增加,其壁面温度逐渐升高,临界热流密度逐渐减小。
Electronic chips in the FC-72 working medium immersed in boiling heat transfer were experimentally studied. A series of columnar microstructures (30μm × 60μm, 50μm × 60μm, 50μm × 120μm, 30μm × 120μm, width × height) were fabricated on the surface of silicon wafer by dry etching. The size of the silicon wafer was 10mm × 10mm × 0.5mm. Degree of undercooling is 35 K, jet velocity V is 0.5,1,1.5 m / s respectively. The numbers of nozzles were 1, 4 and 9, respectively, with diameters of 3, 1.5 and 1 mm respectively. The distance from the nozzle exit to the chip surface is 3, 6 and 9 mm, respectively. Experiments show that the staggered columnar microstructure has a better heat transfer efficiency than the smooth chip, and the critical heat flux increases with the increase of jet velocity. When the Reynolds number and other conditions are the same, the number of different nozzles has different effects on the heat transfer. When n = 4, all the chips have the lowest wall temperature, the highest critical heat flux, followed by n = 9, The difference is n = 1. Under the same Reynolds number and other conditions, the heat transfer performance of all the chips is best at the spray distance s = 3 mm, the lowest wall temperature and the highest critical heat flux density, and the wall temperature gradually increases with the injection distance Rise, the critical heat flux density decreases gradually.