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将SOI技术优势引入SiGe HBT,可满足当前BiCMOS高速低功耗的应用需求.SOI SiGe HBT作为BiCMOS工艺的核心器件,其频率特性决定了电路所能达到的工作速度.为此,本文针对所提出的SOI SiGe HBT器件结构,重点研究了该器件的频率特性,并通过所建立的集电区电容模型予以分析.规律和结果为:1)SOI SiGe HBT特征频率随集电区掺杂浓度的升高而增加;2)SOI SiGe HBT特征频率与集电极电流IC之间的变化规律与传统SiGe HBT的相一致;3)正常工作状态,SOI SiGe HBT(集电区3×1017cm-3掺杂)最高振荡频率fmax大于140 GHz,且特征频率fT大于60 GHz.与传统SiGe HBT相比,特征频率最大值提高了18.84%.以上规律及结论可为SOI SiGe HBT及BiCMOS的研究设计提供重要依据.
The introduction of the advantages of SOI technology into SiGe HBT can meet the current high-speed and low-power application requirements of BiCMOS.SOI SiGe HBT as the core device of BiCMOS technology, its frequency characteristics determine the circuit speed can be achieved.To this end, , The frequency characteristic of the device is studied emphatically and analyzed through the established collector capacitance model.The regularities and results are as follows: 1) The characteristic frequency of SOI SiGe HBT increases with the doping concentration of collector High and increasing; 2) The variation law between the characteristic frequency and the collector current IC of SOI SiGe HBT is consistent with that of the conventional SiGe HBT; 3) In the normal operation state, the SOI SiGe HBT (collector region 3 × 1017cm-3 doping) The maximum oscillation frequency fmax is greater than 140 GHz and the characteristic frequency fT is greater than 60 GHz.Compared with the conventional SiGe HBT, the maximum of the characteristic frequency is increased by 18.84%. The above rules and conclusions can provide an important basis for the research design of SOI SiGe HBT and BiCMOS.