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用等离子体增强化学气相淀积 (PECVD)生长了 2 0 0nm的SiGe薄膜 ,然后将C离子注入SiGe层 ,经两步热退火处理制备了Si1 -x -yGexCy 三元合金半导体薄膜 .应用卢瑟福背散射 (RBS) ,傅里叶变换红外光谱 (FTIR)和高分辨率x射线衍射 (HRXRD)研究了薄膜的结构和外延特性 .发现C原子基本处于替代位置 ,C原子的掺入缓解了SiGe层的压应变
SiGe films were grown by plasma enhanced chemical vapor deposition (PECVD) with a thickness of 2000 nm and then Si ions were implanted into the SiGe layer to prepare Si1-x-yGexCy ternary alloy semiconductor films by two-step thermal annealing process. The structure and epitaxial properties of the films were investigated by Fourier transform infrared spectroscopy (FBSR), Fourier transform infrared spectroscopy (FTIR) and high resolution X-ray diffraction (HRXRD). It was found that the C atoms were basically in an alternative position and the incorporation of C atoms was alleviated SiGe layer of the compressive strain