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ZnO films with low resistivity and high transmittance in the visible optical region were deposited on GaAs and glass substrates by MOCVD at atmospheric pressure using diethyl zinc and tetrahydrofuran as precursors.The X-ray diffraction results revealed that ZnO epilayer on GaAs showed good crystalline character and exhibited (002) orientation with the c-axis perpendicular to the substrate surface.The resistivity of ZnO films in the range from 10-3～10-2 Ω.cm was found to be dependent upon the initial partial pressure of diethyl zinc and tetrahydrofuran.