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日本电气公司研制成功一种可工作在X波段的自对准栅增强型InP MISFET,并在七月份召开的电子通信学会电子器件研究会上发表了其详细结果。器件的制作过程如下。在掺铁的半绝缘InP衬底上生成n~+外延层之后,再生长作掩模用的SiO_2层(用作腐蚀沟道掩模,并自对准地形成金属栅,接着腐蚀除去n~+层。其次,形成Ni/Au-Ge源和漏欧姆电极以及CVDSiO_2栅绝缘膜,在上面蒸发栅电极金属铝,并腐蚀除去栅以外部分的铝,最后开源和漏的接触窗口,作Au/Pt/Ti键合点。器件的沟长约为0.8μm,
NEC has developed a self-aligned gate-enhanced InP MISFET capable of operating in the X-band, and presented its detailed results at the Institute of Electronics and Electronics Electronics Conference in July. Device fabrication process is as follows. After the n ~ + epitaxial layer is formed on the iron-doped semi-insulating InP substrate, the SiO 2 layer for the mask is grown again (used as an etching channel mask and the metal gate is formed in a self-aligning manner, Then, a Ni / Au-Ge source and drain ohmic electrode and a CVDSiO 2 gate insulating film were formed, the gate electrode metal aluminum was evaporated thereon and the aluminum except for the gate was etched away, and finally the open and the drain contact windows were formed for Au / Pt / Ti bond point.The device trench length is about 0.8μm,