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本文描述了在(100)InP衬底上用液相外延(LPE)方法生长In_(1-x)Ga_xAs_yP_(1-y),外延层时,液相组分X_(Ga)~l、X_(A5)~l变化对外延片晶格失配及发射波长的影响,以及生长温度变化对晶格失配的影响。并对实验结果进行了简单的理论上的分析和探讨。
In this paper, the growth of In_ (1-x) Ga_xAs_yP_ (1-y), epitaxial layers by Liquid Phase Epitaxy (LPE) on (100) A5) ~ l on the epitaxial wafer lattice mismatch and emission wavelength, as well as the growth temperature changes on the lattice mismatch. And the experimental results of a simple theoretical analysis and discussion.