论文部分内容阅读
High performance 150-nm gate-length metamorphic Al0.48In0.52As/Ga0.47In0.53 As high electron mobility transistors(mHEMTs) with very good device performance have been successfully fabricated.A T-shaped gate is fabricated by using a combined technique of optical and e-beam photolithography,which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate.The ohmic contact resistance R c is as low as 0.03 mm when using a novel ohmic contact metal system(Ni/Ge/Ti/Au).The devices exhibit excellent DC and RF performance.A peak extrinsic transconductance of 775 mS/mm and a maximum drain current density of 720 mA/mm are achieved.The unity current gain cut-off frequency(fT) and the maximum oscillation frequency(f max) are 188.4 and 250 GHz,respectively.
High performance 150-nm gate-length metamorphic Al0.48In0.52As / Ga0.47In0.53 As high electron mobility transistors (mHEMTs) with very good device performance have been successfully fabricated. A T-shaped gate is fabricated by using a combined technique of optical and e-beam photolithography, which is beneficial to parasitic capacitance and parasitic resistance of the gate. The ohmic contact resistance R c is as low as 0.03 mm when using a novel ohmic contact metal system (Ni / Ge / Ti / Au ). The devices exhibit excellent DC and RF performance. A peak extrinsic transconductance of 775 mS / mm and a maximum drain current density of 720 mA / mm are achieved. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (f max) are 188.4 and 250 GHz, respectively.