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为了满足微电子机械系统(MEMS)器件制作要求,各向异性腐蚀加工后的硅衬底需具有良好的表面质量。针对MEMS用硅单晶在各向异性腐蚀加工过程中出现的腐蚀表面粗糙、不平整问题,采用常规直拉(Cz)单晶、掺锗直拉单晶和磁场直拉单晶等不同工艺制备了多种硅单晶样品,并测试了其常规电参数、氧杂质浓度和微缺陷等参数。针对各种硅单晶样品,模拟了器件制作过程中各向异性腐蚀实验,获得了硅单晶的腐蚀表面情况,对比得出了影响硅单晶各向异性腐蚀质量的关键因素在于硅单晶内的氧杂质浓度及氧沉淀密度的控制,并从原子表面能和应力等方面推断晶体中氧沉淀缺陷对各向异性腐蚀质量的影响机理。
In order to meet the microelectromechanical system (MEMS) device manufacturing requirements, anisotropic etching of the silicon substrate after the need to have a good surface quality. Aiming at the problem of surface roughness and unevenness of corrosion on the surface of MEMS silicon single crystal in anisotropic etching process, Cz single crystal, Ge-doped Czochralski crystal and magnetic field Czochralski crystal were used to prepare A variety of silicon single crystal samples, and tested its conventional electrical parameters, oxygen impurity concentration and microdefects and other parameters. For all kinds of silicon single crystal samples, we simulate the anisotropic corrosion experiments in the fabrication process of the device, and get the surface corrosion of the silicon single crystal. The key factor affecting the anisotropic etching quality of the silicon single crystal is that the silicon single crystal The concentration of oxygen in the oxygen and the control of the oxygen deposition density, and from the atomic surface energy and stress inferred from the crystal oxygen precipitation defects anisotropic corrosion quality mechanism.