一、引言 对SnO_2、In_2O_3和ITO透明导电膜已进行过广泛的研究。用这些薄膜作a-Si太阳电池的透明导电抗反射膜,可减小窗口薄层的串联电阻,增加光的传输。其制备方法,有化学汽相沉积法、溅射法和喷镀法,近来还报道有铟、锡及其氧化物的反应蒸发法。上述多数方法需要较高的沉积温度,甚至沉积后还要进行热处理,这对a-Si太阳电池的性能会 I. Introduction SnO_2, In_2O_3 and ITO transparent conductive films have been extensively studied. With these films for a-Si solar cell transparent conductive anti-reflective film, can reduce the series resistance of the window layer, increasing light transmission. The preparation method includes the chemical vapor deposition method, the sputtering method, and the sputtering method. Recently, reaction evaporation methods of indium, tin and their oxides have also been reported. Most of the above methods require a higher deposition temperature, even after deposition but also heat treatment, which a-Si solar cell performance will be