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研究了离子注入前后GaN的拉曼散射光谱 ,特别是其中几个在各种离子注入后都存在的拉曼散射峰 ,如 2 98,36 2和 6 6 1cm- 1 峰的性质 ,峰值强度随注入元素原子量、注入剂量和退火温度的变化关系 .上述三个拉曼散射峰的强度都随注入元素原子量的增加而降低 .当注入剂量增大时 ,36 2和 6 6 1cm- 1 峰值强度减少 ,而 2 98cm- 1 峰值强度却增大 .随退火温度的升高 ,这三个拉曼散射峰的强度先增加后降低 .对所观察到的实验现象和这三个峰的起源进行了分析和讨论 .
The Raman scattering spectra of GaN before and after ion implantation were investigated. In particular, several of these Raman scattering peaks, such as the peaks of 2 98, 36 2 and 6 6 1 cm -1 existing after various ion implantation, the peak intensity The atomic weight of the injected element, the dose of implantation and the annealing temperature.The intensities of the three Raman scattering peaks all decreased with the increase of the atomic weight of the injected element.The peak intensities of 36 2 and 6 6 1 cm -1 decreased as the implantation dose increased , While the peak intensity at 2 98 cm -1 increased.With the increase of annealing temperature, the intensity of these three Raman scattering peaks firstly increased and then decreased.The observed phenomena and the origins of these three peaks were analyzed And discussion.