论文部分内容阅读
相变存储器(Phase Change Memory,PCM)是一种新兴的非易失性存储器技术。PCM存储单元是一种极小的GST(锗、锑和碲)硫族化合物颗粒,通过电脉冲的形式集中加热
Phase Change Memory (PCM) is an emerging non-volatile memory technology. The PCM cell is an extremely small group of GST (germanium, antimony and tellurium) chalcogenide particles, concentratedly heated in the form of electrical impulses