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利用直流脉冲磁控溅射法在室温下制备无氢SiNx薄膜.通过傅里叶变换红外光谱、台阶仪、紫外—可见分光光度计、接触角测量仪、透湿测试仪等表征技术,分析了N2流量、Si靶溅射功率等实验参数对SiNx薄膜成分、结构、及阻透性能、透光性能、接触角等性能的影响.研究结果表明,Si靶溅射功率固定时,在低N2流量条件下,或N2流量固定时,在高Si靶溅射功率条件下,制备的SiNx薄膜中Si—N键含量高,结构致密,薄膜对H2O的阻透性能优良,随着N2流量的增加或者Si靶溅射功率的降低,SiNx薄膜成分、结构发生变化,红外光谱发生偏移,其对H2O的阻透性能下降.在N2流量为6sccm,Si靶溅射功率为300W时制备的SiNx薄膜在可见光波段透过率超过97.5%,对H2O的接触角为30°,同时其对H2O的渗透系数最低,为0.764,综合性能满足柔性有机电致发光器件封装用阻透膜的要求,因此SiNx薄膜有望成为新一代柔性有机电致发光器件封装用阻透材料.
The hydrogen-free SiNx thin films were prepared by DC pulsed magnetron sputtering at room temperature.Finally, by Fourier transform infrared (FTIR) spectroscopy, step spectrometer, UV-visible spectrophotometer, contact angle measurement and moisture permeability tester, N2 flow rate and sputtering power of Si target on the composition, structure, permeation resistance, transmittance and contact angle of SiNx thin films were studied.The results show that when Si target sputtering power is fixed, Or N2 flow rate is fixed, under high sputtering power of Si target, the content of Si-N bond in the prepared SiNx film is high, the structure is dense, the film has excellent barrier property to H2O, and as the flow rate of N2 increases or Si target sputtering power decreases, SiNx thin film composition, structure changes, infrared spectrum shift, its resistance to the penetration of H2O decreased.While the N2 flow rate of 6sccm, Si target sputtering power of 300W prepared SiNx film in the Visible light band transmittance of more than 97.5%, a contact angle of H2O of 30 °, while its lowest permeability coefficient of H2O, 0.764, the overall performance to meet the flexible organic electroluminescent device package with a permeable membrane requirements, the SiNx film Is expected to become a new generation of soft Barrier materials for packaging organic electroluminescent devices.