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用常压ＭＯＣＶＤ方法在ＧａＡｓ（１００）衬底上生长了ＣｄＺｎＴｅ／ＺｎＴｅ多量子阱。在室温下，观测到了ＣｄＺｎＴｅ／ＺｎＴｅ多量子阱的三个谱带发光。根据ＣｄＺｎＴｅ／ＺｎＴｅ多量子阱的吸收光谱和不同激发光强下的发光光谱，分别归结ＣｄＺｎＴｅ／ＺｎＴｅ多量子阱中观测到的三个发光谱带于覆盖层发光、ｎ＝１的重空穴激子发光及杂质发光。
CdZnTe / ZnTe multiple quantum wells were grown on GaAs (100) substrates by atmospheric MOCVD. Three bands of CdZnTe / ZnTe multiple quantum wells were observed to emit light at room temperature. According to the absorption spectra of CdZnTe / ZnTe multiple quantum wells and the luminescence spectra under different excitation intensities, the three luminescence bands observed in the CdZnTe / ZnTe multiple quantum wells are respectively luminescent and n = 1 heavy hole excitations Sub-glow and impurities glow.