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ＴＰＤ：ＣｕＰｃＬＢ薄膜作为电子阻挡层被引入到ＩＴＯ／ＴＰＤ：ＣｕＰｃ／Ａｌｇ：ＤＣＭ１／Ａｌ电致发光器件中的ＰＰＶ和Ａｌｑ：ＤＣＭ１层之间。不含任何ＴＰＤ：ＣｕＰｃ层或仅含单层ＴＰＤ：ＣｕＰｃ且在较高直流电压（≥８Ｖ）驱动下的器件，它们的发射光谱同时来自ＰＰＶ（５１３ｎｍ）和Ａｌ：ＤＣＭ１（５９１ｎｍ）。相反，当含单层ＴＰＤ：ＣｕＰｃ的器件在较低电压驱动下（＜７Ｖ）或含双层ＴＰＤ：ＣｕＰｃ的器件均具有５９１ｎｍ的发射峰值，这表明在此类器件中Ａｌ：ＤＣＭ１作为电子转移型的发光层而ＴＰＤ：ＣｕＰｃ则作为能有效地阻挡电子的电子阻挡层，因而我们可以通过调整载流子阻挡层的厚度来精确地控制载流子的复合区域从而得到不同的电致发光光谱
TPD: A CuPcLB thin film was introduced as an electron blocking layer between PPV and Alq: DCM1 layers in an ITO / TPD: CuPc / Alg: DCM1 / Al electroluminescent device. Devices that do not contain any TPD: CuPc layer or only a single layer of TPD: CuPc and are driven at higher DC voltage (≥8V) have their emission spectra both from PPV (513nm) and Al: DCM1 (591nm). In contrast, devices with a single layer of TPD: CuPc have emission peaks of 591 nm both at lower voltages (<7V) or devices containing a two-layer TPD: CuPc, indicating that Al: DCM1 acts as an electron transfer Type of light-emitting layer and TPD: CuPc then acts as an electron blocking layer that effectively blocks the electrons so that we can precisely control the recombination region of the carriers by adjusting the thickness of the carrier blocking layer to obtain different electroluminescence spectra