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用激光分子束外延成功地制备出钙钛矿氧化物La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 p-n结, 首次观测到钙钛矿结构氧化物p-n结电流的磁调制和巨磁电阻效应. 其巨磁电阻特性与掺杂的镧锰氧化物是非常不同的, 当温度为300, 200和150 K时, p-n结具有正磁电阻特性; 当温度为100 K时, 在低磁场条件下, p-n结呈现正磁电阻特性, 随着磁场强度的增加, p-n结变为负磁电阻特性. p-n结的磁电阻变化率△R/R0(△R = RH -R0, R0是外磁场为0时p-n结的电阻, RH是外磁场强度为H时p-n结的电阻) 在300 K条件下, 当磁场强度为0.1和5 T时, 达到8%和13%; 在200 K条件下, 当磁场强度为5 T时, 达到41%; 在150 K条件下, 当磁场强度为1 T时, 达到40%; 在100 K条件下, 当磁场强度为0.13和5 T时, 达到10%和-60%.
The magnetic modulation and Giant Magneto-Resistive Effect of perovskite-structure oxide pn junction current were first successfully obtained by laser molecular beam epitaxy. The La0.9Sr0.1MnO3 / SrNb0.01Ti0.99O3pn junction The giant magnetoresistance characteristic is very different from that of the doped lanthanum manganese oxide. The pn junction possesses the positive magnetoresistance characteristic when the temperature is 300, 200 and 150 K; when the temperature is 100 K, under the condition of low magnetic field, pn Results show positive magnetic resistance characteristics, with the magnetic field strength increases, the pn junction becomes a negative magnetoresistance characteristics. Pn junction of the magnetic resistance change rate △ R / R0 (△ R = RH -R0, R0 is the external magnetic field is 0 pn Junction resistance, RH is the resistance of the pn junction when the external magnetic field strength is H) reaches 8% and 13% at 300 K when the magnetic field strengths are 0.1 and 5 T; at 200 K, when the magnetic field strength is 41% at 5 T, 40% at 150 K at 1 T, and 10% and -60% at 100 K at 0.13 and 5 T magnetic fields.