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在In_(0.6)Ga_(0.4)As/GaAs量子点中,采用一维等效势模型和有限差分法理论计算了激子态的性质,得到了激子跃迁能和束缚能随磁场、横向束缚强度以及量子点尺寸的变化关系.结果表明:加入磁场后,Zeeman效应使得激子的能级简并度解除,激子的基态跃迁能与实验符合得很好;横向束缚强度或磁场强度的增加使得激子的束缚增强;量子点的尺寸对激子的束缚产生重要的影响;通过电子-空穴间平均距离以及激子体系波函数分布图像分析了其产生的物理机制.
In the In_ (0.6) Ga_ (0.4) As / GaAs quantum dots, the one-dimensional equivalent potential model and the finite difference method are used to calculate the properties of exciton states. The exciton transition energies and binding energies are obtained as a function of magnetic field, Intensity and quantum dot size.The results show that the Zeeman effect makes the energy level degeneracy of the exciton relieved when the magnetic field is added, and the ground state transition energy of the exciton is in good agreement with the experiment. The lateral restraint strength or the magnetic field strength increases The size of the quantum dot has an important influence on the confinement of the exciton. The physical mechanism of the exciton binding is analyzed by the electron-hole average distance and the wave function distribution image of the exciton system.