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采用Chartered 0.18-μm CMOS工艺,设计了一种基于MOS亚阈值特性的全MOS结构电压基准源。它利用VT的正温度特性补偿VTH的负温度特性,以实现一个零温度系数的输出电压。为了实现较低的功耗,大部分MOS晶体管均工作在亚阈值区。仿真结果表明:电路可工作在0.7V到3.6V电压范围内;在0℃～120℃范围内,电压基准的温度系数可达2.97×10-6/℃;在1V电源电压下,电路的静态功耗和输出电压值分别为1.48μW和430.6mV;在没有滤波电容的情况下,在1kHz时,输出电压的电源电压抑制比为-61dB。
Based on the Chartered 0.18-μm CMOS technology, a MOS-based voltage reference based on the MOS subthreshold characteristics was designed. It uses the positive temperature characteristic of VT to compensate the negative temperature characteristic of VTH to achieve a zero temperature coefficient of output voltage. In order to achieve lower power consumption, most of the MOS transistors are working in the subthreshold region. The simulation results show that the circuit can work in the voltage range of 0.7V to 3.6V, and the temperature coefficient of voltage reference can reach 2.97 × 10-6 / ℃ in the range of 0 ℃ ~ 120 ℃. Under 1V power supply voltage, the circuit static The power dissipation and output voltage values are 1.48μW and 430.6mV, respectively; at 1kHz, the supply voltage rejection ratio of the output voltage is -61dB with no filter capacitor.