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讨论大面积4cm×4cm纳米金刚石膜制备工艺.采用电子辅助-热丝化学气相沉积法(EA-HFCVD)在硅片上沉积纳米金刚石膜.生长过程中,预先加6安培偏流生长1小时,然后在0.8千帕条件下,无偏流生长3小时.原子力镜表征晶粒尺寸为30纳米.样品上任意三点采用原子力镜表征,表现出良好均匀性.采用偏振光椭圆率测量仪和分光计分别表征样品的折射率和透射率.红外波段透过率超过50%.金刚石膜表面分别进行氢化和氧化处理.通过表征,氢化处理后膜比氧化处理后膜对应的γ值大,约为0.45 .
The preparation process of large area 4cm × 4cm nano-diamond films was discussed.The nanocrystalline diamond films were deposited on the silicon wafers by electron-assisted hot filament chemical vapor deposition (EA-HFCVD), and pre-applied 6 amperes of bias current for 1 hour and then At a flow rate of 0.8 kPa for 3 hours without bias flow, atomic force microscopy characterizes the grain size of 30 nm, and any three points on the sample were characterized by atomic force microscopy and showed good homogeneity. Using a polarization ellipsometer and a spectrometer, The refractive index and transmittance of the sample were characterized.The infrared transmittance of the film was more than 50% .The surface of the diamond film was hydrogenated and oxidized respectively.The γ value corresponding to the film after hydrogenation was larger than that of the film after oxidation by about 0.45.