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本文研究了晶体管电流增益漂移的统计规律。获得了对其均值和方差的预测方法，利用Monte－Carlo仿真对实际产品在寿命试验中的失效进行了预测，与实际试验进行对比，获得令人满意的结果。
This paper studies the statistical law of transistor current gain drift. Obtained the method of forecasting the mean and variance of it, and predicted the failure of the actual product in the life test by Monte-Carlo simulation. Compared with the actual test, satisfactory results were obtained.