Electron Mobility of Doped Strained Si1-x Gex Alloys Grown on Si(100) Substrate^①②

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The electron mobility for strained Si1-xGex alloy layer grown on Si(100) substrate has been calculated for doping rage of 10^17 cm^-3 to 10^20 cm^-3with Ge contents of 0.0≤x≤1.0.The results show a decrease in the mobility with increasing of Ge content an
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