With electron assisted hot filament chemical vapor deposition technology, nanocrystalline diamond films were deposited on polished n-(100)Si wafer surface. The deposited films were characterized and observed by Raman spectrum, X-ray diffraction, semiconductor characterization system and Hall effective measurement system. The results show that with EA-HFCVD, not only an undoped nanocrystalline diamond films with high-conductivity (p-type semiconducting) but also a p-n heterojunction diode between the nanocrystalline diamond films and n-Si substrate is fabricated successfully. The p-n heterojunction has smaller forward resistance and bigger positive resistance. The p-n junction effective is evident.