本文论述了用热壁外延的方法在CdTe体材料衬底上生长CdTe,并且用各种方法对CdTe外延层进行的研究。为提高衬底材料的质量。我们采用热壁外延方法在CdTe体材料衬底上再外延生长—层CdTe缓冲层,如果外延条件适当,缓冲层一般可使体材料的一部分缺陷消除或减少,好的外延层同经过仔细表面处理的体材料衬底一样是镜面的,因此可直接用作外延HgCdTe This paper discusses the growth of CdTe on the substrate of CdTe bulk material by thermal wall epitaxy and the research on the CdTe epitaxial layer by various methods. To improve the quality of the substrate material. We use hot-wall epitaxy method to re-epitaxially grow a layer of CdTe buffer layer on the substrate of CdTe material. If the epitaxial conditions are appropriate, the buffer layer can generally eliminate or reduce a part of the defects of the bulk material. The good epitaxial layer is carefully surface treated The bulk material substrate is mirror-like and can therefore be used directly as epitaxial HgCdTe