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获得高电阻率的、完整性好的 Cd Zn Te晶体是研制高性能的 Cd Zn Teγ射线探测器的关键 .运用热力学关系估算了 Cd1 - x Znx 熔体平衡分压 ,尝试以 Cd1 - x Znx 合金源替代 Cd源进行 Cd0 .8Zn0 .2 Te晶片的热处理 ,研究了退火对 Cd0 .8Zn0 .2 Te晶片质量的影响 .结果表明 :在 10 6 9K下用 Cd0 .8Zn0 .2 合金源 (PZn=0 .12 2× 10 5 Pa和 PCd=1.2 0×10 5 Pa)对 Cd0 .8Zn0 .2 Te晶片退火 5天以上 ,可提高晶体电阻率一个数量级和晶体红外透过率 10 %以上 ,并可消除或减小晶片中的 Te沉淀 ,同时避免了 Zn的损失 ,改善 Zn的径向分布 .可见 ,采用 Cd1 - x Znx 合金源代替 Cd源控制进行 CZT退火处理优于仅采用 Cd源控制的退火处理 .
Obtaining high resistivity and good integrity of Cd Zn Te crystal is the key to the development of high performance Cd Zn Te γ - ray detector.The equilibrium partial pressure of Cd1 - x Znx melt was estimated by thermodynamic relationship, and the Cd1 - x Znx alloy The effect of annealing on the quality of Cd0.8Zn0.2 Te wafers was investigated by heat treatment of Cd0.8Zn0.2 Te wafers instead of Cd source. The results show that with Cd0.8Zn0.2 Te .12 2 × 10 5 Pa and PCd = 1.2 × 10 5 Pa) annealed over Cd0.8Zn0.2 Te wafers for more than 5 days increased crystal resistivity by an order of magnitude and crystal IR transmittance by more than 10% and eliminated Or reduce the Te precipitation in the wafer while avoiding the loss of Zn and improving the radial distribution of Zn.It can be seen that the CZT annealing using Cd1 - x Znx alloy instead of Cd source is better than the annealing using Cd source only .