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具有特定边界的石墨烯纳米结构在纳电子学、自旋电子学等研究领域表现出良好的应用前景.然而石墨烯加工成纳米结构时,无序的边界不可避免地会降低其载流子迁移率.氢等离子体各向异性刻蚀技术是加工具备完美边界石墨烯微纳结构的一项关键技术,刻蚀后的石墨烯呈现出规则的近原子级平整的锯齿形边界.本文研究了氮化硼上锯齿形边界石墨烯反点网络的磁输运性质,低磁场下可以观测到载流子围绕着一个空位缺陷运动时的公度振荡磁阻峰.随着磁场的增大,朗道能级简并度逐渐增大,载流子的磁输运行为从Shubnikov-de Haas振荡逐渐向量子霍尔效应转变.在零磁场附近可以观测到反点网络周期性空位缺陷的边界散射所导致的弱局域效应.研究结果表明,在氮化硼衬底上利用氢等离子体刻蚀技术加工锯齿形边界石墨烯反点网络,其样品质量会明显提高,这种简单易行的方法为后续高质量石墨烯反点网络的输运研究提供了新思路.
Graphene nanostructures with specific boundaries have shown promising applications in nanoelectronics and spintronics, etc. However, when graphene is processed into nanostructures, disordered boundaries will inevitably reduce its carrier mobility Rate.Hydride plasma anisotropic etching is a key technology for processing micro / nanostructures with perfect boundary graphene.The etched graphene exhibits a regular near-atom-level zigzag boundary.In this paper, nitrogen The magnetic transport properties of the antiport network of the zigzag boundary graphene on boron nitride can be observed in a low magnetic field. With the increase of the magnetic field, Landau The degeneracy of the energy level increases gradually, and the magnetic transport of carriers gradually transforms from the Shubnikov-de Haas oscillation to the quantum Hall effect. The boundary scattering of the periodic vacancy defects in the inverse network can be observed near zero magnetic field .The results show that the sample quality of the serrated boundary graphene network can be significantly improved by hydrogen plasma etching on the boron nitride substrate, Row method for the subsequent high-quality transport network of graphene network provides a new idea.