在高温下(600～1000℃)用硅烷分解法于热氧化层上生长了多晶硅。从生长条件影响的角度出发研究并讨论了结晶学电学性能及其他方面的性能。发现掺硼多晶硅的导电率为生长温度、气相中B_2H_6的浓度、薄膜厚度以及载运气体的函数。而且这些因素看来似乎主要改变薄膜的载流子浓度。 Polycrystalline silicon was grown on the thermal oxide layer by silane decomposition at high temperature (600-1000C). From the perspective of the influence of growth conditions, the crystallographic electrical properties and other aspects of the properties are studied and discussed. It is found that the conductivity of boron doped polycrystalline silicon is the growth temperature, the concentration of B 2 H 6 in the gas phase, the film thickness and the carrier gas. And these factors seem to mainly change the film carrier concentration.