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讨论了包括丝网印刷、厚膜光刻、荧光粉沉积成膜、喷涂等厚膜工艺以及后栅极结构场致发射显示屏的制备工艺。研究了老炼工艺对阴极发射特性的改善。采用全厚膜工艺制备了2英寸后栅极场发射显示板样屏,在阳极距为1mm的后栅极结构中,阳极工作电压为2kV时,通过对样屏的测试分析,阴极开关范围差小于100V,达到了行列低压寻址驱动的要求,验证了全厚膜制备后栅极场发射显示板的可行性。
The preparation process of thick film technology including screen printing, thick film lithography, phosphor deposition, spray coating and field emission display of rear gate structure are discussed. The improvement of the cathode emission characteristics of the aging process was studied. Full-thick film process was used to prepare a 2-inch back gate field emission display panel samples, anode back to the gate structure of 1mm, anode voltage is 2kV, through the sample screen test analysis, the cathode switch range of poor Less than 100V, which meets the requirements of low-voltage addressable driving in the ranks and verifies the feasibility of the gate field emission display panel after the full thick film is prepared.