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本文提出一种确定混合焦平面阵列(FPA)红外光敏基片和硅读出基片间铟柱对接效率的简易电学方法,在这种情况下,红外光敏基片由16×16碲镉汞(MCT)光伏阵列组成,而读出基片是一个16×16硅电荷耦合器件(CCD)多路传输器(MUX)。不过,这种方法使人们能在室温下确定对接效率。而混合FPA不需要在杜瓦瓶中进行真空密封,并且要77K温度下试验,以确定这种效率。此方法在象元到象元基础上实质是验证一下MCT光伏二极管和CCDMUX中相应的扩散输入端之间电的接触性。室温下用示波器对整个阵列的读出进行简单的实验,从探测器开始,直到CCDMUX都测试,以准确确定在铟柱对接之后有多少MCT光伏二极管有效地连接到与其相对应的CCDMUX象元上。
In this paper, we propose a simple electrical method to determine the interfacial efficiency of indium-tin interconnects between a hybrid FPA substrate and a silicon readout substrate. In this case, the infrared-sensitive substrate consists of 16 × 16 CdTe MCT) photovoltaic array, while the readout substrate is a 16x16 silicon CCD (Charge Coupled Device) multiplexer (MUX). However, this method allows one to determine the docking efficiency at room temperature. The hybrid FPA does not require a vacuum seal in the Dewar and tests at 77K to determine this efficiency. This method, on a pixel-by-pixel basis, essentially verifies the electrical contact between the corresponding diffused inputs of the MCT PV diode and CCDMUX. A simple experiment with an oscilloscope reading the entire array at room temperature starts with the detector until the CCDMUX is tested to determine exactly how many MCT PV diodes are effectively connected to its corresponding CCDMUX pixel after the indium column is docked .