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以非制冷微测辐射热计型红外探测器应用为需求背景,采用射频磁控溅射技术在300℃低温条件下制备了氧化钒薄膜。采用X射线衍射(XRD)、原子力显微镜(AFM)、能量色散谱(EDS)及X射线光电子能谱(XPS)技术表征了薄膜的结晶状态、微观结构与化学组成。采用四探针技术研究了薄膜的电学性能。结果表明该薄膜主要为非晶态的二氧化钒(VO2),并具有光滑的表面形貌。这种非晶VO2薄膜在22～100℃温度范围内不存在半导体-金属相变。100 nm厚的非晶VO2薄膜室温下的面电阻为600 kΩ/□,同时表现出-2.1%/℃的较高电阻温度系数(TCR),这表明该薄膜有希望用于非制冷微测辐射热计型红外探测器。
Based on the application background of uncooled microbolometer infrared detector, the vanadium oxide film was prepared by RF magnetron sputtering at a low temperature of 300 ℃. The crystalline state, microstructure and chemical composition of the films were characterized by XRD, AFM, EDS and XPS. Four probes were used to study the electrical properties of the films. The results show that the film is mainly amorphous vanadium dioxide (VO2), and has a smooth surface morphology. This amorphous VO2 film does not exhibit semiconductor-to-metal phase transition at a temperature in the range of 22 to 100 ° C. The 100 nm thick amorphous VO2 film has a sheet resistance of 600 kΩ / □ at room temperature while exhibiting a higher TCR of -2.1% / ° C, indicating that the film is promising for uncooled microbolometer radiation Thermal Meter Infrared Detector.