通过解剖常规工艺CMOS LSI芯片结构,发现其失效的一种重要模式是PMOS管源、漏区硼扩散横向连通.分析了产生这种失效模式的机理.并提出在设计CMOS LSI时,适当调整NMOS和PMOS管的沟道长度,有利于提高成品率和电路性能. Through anatomizing the structure of conventional CMOS LSI chip, it is found that an important mode of its failure is that the source and drain of the PMOS are diffused and laterally connected, and the mechanism of this failure mode is analyzed. It is also proposed that when the CMOS LSI is designed, the NMOS And the channel length of PMOS tube, help to improve the yield and circuit performance.