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纳米压印光刻技术具有低成本、高效率、大面积、高分辨、多尺度、良好的工艺兼容性等特点,可用于亚波长光电子器件的研究。提出了硅水合物(HSQ)/聚丙烯酸甲酯(PMMA)双层胶室温纳米压印工艺方法,研究并解决了有关压印光刻胶剩余底膜和纳米图形保真性刻蚀转移的两个关键工艺技术问题。以制备特定需求的石英纳米光栅器件为目标,经过工艺优化,成功地实现了周期200 nm、占空比0.5、深宽比5∶1、栅线侧壁垂直且粗糙度小于3 nm的高分辨率亚波长光栅的制备。所提出的双层胶刻蚀方法,有望拓展到纳米标准物质和芯片级光学频率梳器件等对侧壁陡直和粗糙度有严格要求的应用领域。
Nano imprint lithography has the characteristics of low cost, high efficiency, large area, high resolution, multi-scale, good process compatibility and so on, and can be used for the research of sub-wavelength optoelectronic devices. In this paper, a method of room temperature nanoimprint of double layer glue of hydrated silicon (HSQ) / poly (methyl acrylate) (PMMA) is proposed, and two schemes of the remaining base film of imprint photoresist and fidelity etching transfer of nano pattern are studied and solved Key technical issues. Aiming at the preparation of specific requirements of the nanorod devices, after the process optimization, high resolution of 200 nm, duty ratio of 0.5, aspect ratio of 5: 1, perpendicularity of the sidewalls of the gate lines and roughness of less than 3 nm Rate sub-wavelength grating preparation. The proposed double-layer photoresist etching method is expected to be extended to the applications of nano-standard materials and chip-level optical frequency comb devices that have strict requirements on the steepness and roughness of sidewalls.