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实验验证了室温下二维氧化物下包层非对称平板三角晶格光子晶体渐变型双异构微腔对绝缘体上硅(SOI)基片上铒氧共掺硅材料的显著发光增强作用。在波长为488nm、功率为15mW激光激发下,微腔的光致发光(PL)谱呈现出一个位于1 557.93nm通信波长处的尖锐狭窄的发光峰,相比于无光子晶体区域,发光增强了约13倍。谐振峰随光泵浦功率增加,发生明显的红移,Q值逐渐下降,在1.5mW光泵浦功率下,Q值达6 655。微腔谐振波长与光子晶体晶格周期之间呈线性正比关系,通过调整晶格周期,实现了掺铒硅发光增强峰波长的灵活可控。
The experimental results show that the graded double heterogeneous microcavity of asymmetric flat triangular lattice photonic crystal with two-dimensional oxide under cladding at room temperature can significantly enhance the luminescence of erbium-oxygen co-doped silicon on silicon on insulator (SOI) substrate. The photoluminescence (PL) spectrum of the microcavity shows a sharp and narrow luminescence peak at a wavelength of 1 557.93 nm at a wavelength of 488 nm and a power of 15 mW. Compared with the photonic crystal region, the luminescence is enhanced About 13 times. With the increase of optical pumping power, the resonance peak obviously red-shifted and the Q value decreased gradually. Under 1.5 mW optical pumping power, the Q value reached 6 655. The microcavity resonant wavelength has a linear relationship with the photonic crystal lattice period. By adjusting the lattice period, the erbium-doped silicon luminescence enhancement peak wavelength can be achieved flexibly and controllably.