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为了提高基于绝缘体上的硅(SOI)技术实现的横向扩散金属氧化物半导体器件(SOI LDMOS)的击穿电压,提出了斜埋氧SOI LDMOS(S SOI LDMOS)耐压新结构。当器件关断时,倾斜的埋氧层束缚了大量的空穴,在埋氧层上界面引入了高密度的正电荷,大大增强了埋氧层中的电场,从而提高了纵向耐压。另外,埋氧层的倾斜使器件漂移区厚度从源到漏线性增加,这就等效于漂移区采用了线性变掺杂,通过优化埋氧层倾斜度,可获得一个理想的表面电场分布,提高了器件的横向耐压。对器件耐压机理进行了理论分析与数值仿真,结果表明新结构在埋氧层厚度为1μm、漂移区长度为40μm时,即可获得600 V以上的击穿电压,其耐压比常规结构提高了3倍多。
In order to improve the breakdown voltage of lateral diffusion metal-oxide-semiconductor devices (SOI LDMOS) based on silicon on insulator (SOI) technology, a new structure of SOI LDMOS (SOI LDMOS) is proposed. When the device is turned off, the inclined buried oxide layer binds a large number of holes and introduces a high density of positive charges at the interface of the buried oxide layer, which greatly enhances the electric field in the buried oxide layer and enhances the vertical breakdown voltage. In addition, the tilt of the buried oxide layer increases the thickness of the device drift region linearly from source to drain, which is equivalent to using a linear variable doping in the drift region. By optimizing the inclination of the buried oxide layer, an ideal surface electric field distribution can be obtained, Improve the device’s lateral withstand voltage. Theoretical analysis and numerical simulation of the breakdown voltage mechanism of the device show that the breakdown voltage is higher than 600 V when the thickness of the buried oxide layer is 1μm and the drift region length is 40μm. The breakdown voltage is higher than the conventional structure More than 3 times.