论文部分内容阅读
以半解析热分析理论为基础,研究了超高斯分布激光二极管(LD)端面抽运背冷式方形Nd:GdVO4微片晶体的热效应。通过对激光晶体工作特点的分析,建立热模型,利用新的热传导方程求解方法,得出了背冷式方形Nd:GdVO4微片晶体内部温度场、热形变场的半解析计算表达式。研究结果表明,当使用输出功率为700 W的LD(超高斯阶次为4)端而中心入射背冷方形Nd:GdVO4晶体(晶体掺钕原子数分数为1.2%)时,在抽运端面中心获得69.6℃最高温升和74.1 nm最大热形变量,与实验结果一致。得出的方法可以应用到其他激光晶体热问题研究中。
Based on the semi-analytical theory of thermal analysis, the thermal effect of the dumped cooled prismatic Nd: GdVO4 microcrystal on the face of a super-Gaussian distributed laser diode (LD) was investigated. By analyzing the working characteristics of the laser crystal, a thermal model was established and a new heat conduction equation was used to solve the problem. The semi-analytical expressions of the temperature field and the thermal deformation field of the back-cold square Nd: GdVO4 microcrystal were obtained. The results show that when a cold-dipped square Nd: GdVO4 crystal with a Nd: GdVO4 crystal with a Nd: GdV content of 1.2% is used at an LD of 700 W (super-Gaussian order of 4) The maximum temperature rise of 69.6 ℃ and the maximum thermal deformation of 74.1 nm were obtained, which were consistent with the experimental results. The method can be applied to other laser crystal thermal problems.