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针对典型n+-p-n-n+结构的双极晶体管,从器件内部电场强度、电流密度和温度分布变化的分析出发,研究了在强电磁脉冲(electromagnetic pulse,EMP)作用下其内在损伤过程与机理.研究表明,双极晶体管损伤部位在不同幅度的注入电压作用下是不同的,注入电压幅度较低时,发射区中心下方的集电区附近首先烧毁,而在高幅度注入电压作用下,由于基区-外延层-衬底构成的PIN结构发生击穿,导致靠近发射极一侧的基极边缘处首先发生烧毁.利用数据分析软件,对不同注入电压下的器件损伤功率P和脉宽T进行拟合得出了P与T之间的关系式,结果表明由于双极晶体管损伤能量的不确定性,强电磁脉冲损伤的经验公式P=AT-1(A为常数)对于双极晶体管应修正为P=AT-1.4.
Aiming at the bipolar transistor with typical n + -pn-n + structure, the inherent damage process and mechanism under the action of strong electromagnetic pulse (EMP) are studied based on the analysis of the electric field intensity, current density and temperature distribution in the device. The results show that the damaged region of bipolar transistor is different under the different injection voltage. When the injection voltage is low, the region near the center of the emitter is burnt down first. Under the action of high amplitude injection voltage, The breakdown of the PIN structure formed by the region-epitaxial layer-substrate led to the first burn-down at the edge of the base close to the emitter side. Using data analysis software, the device damage power P and pulse width T under different injection voltages The relationship between P and T is obtained by fitting. The results show that due to the uncertainty of the damage energy of bipolar transistor, the empirical formula of strong electromagnetic pulse damage P = AT-1 (A is constant) should be corrected for the bipolar transistor P = AT-1.4.