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采用传统混合氧化物工艺在800℃经4小时烧结制备了0.01-0.2mol%Bi2O3掺杂的ZnO-V2O5-SnO2(ZnVSnO)基压敏陶瓷,采用电子天平、SEM、XRD和I-V测试仪研究了其密度、显微结构和电性能随Bi2O3含量的变化。结果表明:随Bi2O3含量升高,ZnVSnO基陶瓷密度变化不大,相对密度均超过了98%;样品均由ZnO主晶相和少量的Zn2SnO4、Bi2Sn2O7第二相组成,但平均晶粒直径从2.13μm降到1.54μm,样品的压敏场强和非线性系数随之升高。当Bi2O3掺杂量为0.2mol%时样品性能最优,其压敏场强、非线性系数和漏电流密度分别为2842V/mm、51.2和0.0925mA/cm2。
ZnO-V2O5-SnO2 (ZnVSnO) based varistor ceramics doped with 0.01-0.2 mol% Bi2O3 were prepared by conventional mixed oxide process at 800 ℃ for 4 hours. The electronic balance, SEM, XRD and IV tester were used to investigate Its density, microstructure and electrical properties with the Bi2O3 content changes. The results show that with the increase of Bi2O3 content, the density of ZnVSnO-based ceramics does not change much, and the relative density exceeds 98%. The samples are composed of the main ZnO and a small amount of second phases of Zn2SnO4 and Bi2Sn2O7, μm down to 1.54μm, the sample pressure-sensitive field strength and nonlinear coefficient increased. When the amount of Bi2O3 doping is 0.2mol%, the sample has the best performance. The pressure-sensitive field strength, nonlinear coefficient and leakage current density are 2842V / mm, 51.2 and 0.0925mA / cm2 respectively.