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利用ＬＰ－ＭＯＣＶＤ在ＺｎＯ／Ａｌ２Ｏ３衬底上生长了ＧａＮ。实验发现低温生长ＧａＮ过渡层有利于晶体质量的提高；样品ＰＬ谱主峰红移到蓝光区，这对于研制蓝色ＬＥＤ具有一定的启发意义
GaN was grown on a ZnO / Al2O3 substrate using LP-MOCVD. The experimental results show that the low temperature growth of GaN transition layer is conducive to the improvement of crystal quality; the main peak of the sample PL red shift to the blue region, which is of some inspiration for the development of blue LED