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为了提高980nm半导体激光器的可靠性,采用氦离子注入形成腔面电流非注入区技术制作了4μm条宽的脊形波导激光器,并利用同一块外延片制作了常规工艺的4μm脊形波导激光器作为对比。经过长期老化实验得知:常规工艺器件在1500h前全部失效,而采取新技术的器件寿命超过了3000h。通过对器件的扫描电镜分析发现,腔面灾变性损伤、铟焊料的质量和腔面污染等因素对器件失效有直接影响。
In order to improve the reliability of the 980nm semiconductor laser, a 4μm wide ridge waveguide laser was fabricated by using helium ion implantation to form a non-implanted region of the cavity current. A conventional 4μm ridge waveguide laser was fabricated by the same epitaxial wafer . After long-term aging experiments show that: all conventional technology devices failed before 1500h, and take the new technology of the device life of more than 3000h. Scanning electron microscopy (SEM) analysis of the device shows that the device has a direct impact on device failure due to the catastrophic damage of the cavity surface, the quality of the indium solder and the pollution of the cavity surface.