Cree Microwave 已研制成一种新的 SiC MESFET 功率晶体管,并可用于各种宽带无线电通信和蜂窝状结构手机的应用。这种新的 SiC MESFET 的性能为48V,10W,A 类晶体管在2.2GHz 具有12dB 的增益。这种器件通过最早的内部可靠性测试以及客户的直接抽样。SiC MESFET 具有比 Si 和 GaAs 器件更宽的宽带性能,这主要是对功率电平 Cree Microwave has developed a new SiC MESFET power transistor that can be used in a wide variety of broadband radiocommunications and cellular handset applications. The performance of this new SiC MESFET is 48V at 10W and Class A transistors have a gain of 12dB at 2.2GHz. This device passes the earliest internal reliability tests and customer direct sampling. SiC MESFETs have wider broadband performance than Si and GaAs devices, mainly on the power level