用单能慢正电子束流作为探针，测量了Ｐ型Ｓｉ中不同Ｂ杂质浓度的正电子湮没Ｓ参数和正电子能量的函数关系。在实验上系统地研究了正电子扩散长度和迁移率随半导体中杂质浓度的变化规律，观察到杂质的掺入不影响缺陷的开体积，但正电子在硅中的迁移率随杂质浓度的增加而减小。 Using a single slow positron beam as a probe, the functional relationship between positron annihilation S parameters and positron energies at different B impurity concentrations in P-type Si was measured. The variation of positron diffusion length and mobility with the concentration of impurities in semiconductors has been systematically studied experimentally. It is observed that the incorporation of impurities does not affect the open volume of defects, but the mobility of positrons in silicon increases with the increase of impurity concentration And reduce.